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s mhop microelectronics c orp. a STM8456 symbolv ds v gs i dm 62.5 w a p d c 2 1.28 i d units parameter -5.3 -22 c/w vv 20 t a =25 c gate-source voltage drain-source voltage thermal characteristics product summary (n-channel) v dss i d r ds(on) (m ) max 40v 6.2a 45 @ vgs=4.5v 33 @ vgs=10v dual enhancement mode field effect transistor ( n and p chann el ) absolute maximum ratings ( t a =25 c unless otherwise noted ) drain current-continuous a -pulsed b a maximum power dissipation a operating junction and storage temperature range t j , t stg thermal resistance, junction-to-ambient r ja ver 1.0 www.samhop.com.tw may,29,2008 1 details are subject to change without notice. a product summary (p-channel) v dss i d r ds(on) (m ) max -40v -5.3a 70 @ vgs=-4.5v 45 @ vgs=-10v n-channel p-channel 40 -40 20 6.24.9 a 25 t a =70 c -55 to 150 t a =25 c t a =70 c e as single pulse avalanche energy d 9 16 mj -4.2 s o-8 1 4 3 2 1 d 2 d 2 d 1 d 1 g 2 s 2 g 1 s 1 5 6 7 8
4 symbol min typ max units bv dss 40 v 1 i gss 100 na v gs(th) 1 v 26 g fs 13.8 s v sd c iss 580 pf c oss 82 pf c rss 50 pf q g 11 nc 10.2 nc q gs 17.3 nc q gd 20 t d(on) 11.3 ns t r 1.2 ns t d(off) 2.9 ns t f ns gate-drain charge v ds =20v,v gs =0v switching characteristics gate-source charge v dd =20v i d =1a v gs =10v r gen =3.3 ohm total gate charge rise time turn-off delay time v ds =20v,i d =6.2a,v gs =10v fall time turn-on delay time m ohm v gs =10v , i d =6.2a v ds =10v , i d =6.2a input capacitance output capacitance dynamic characteristics r ds(on) drain-source on-state resistance forward transconductance diode forward voltage i dss ua gate threshold voltage v ds =v gs , i d =250ua v ds =32v , v gs =0v v gs = 20v , v ds =0v zero gate voltage drain current gate-body leakage current n-channel electrical characteristics ( t a =25 c unless otherwise noted ) off characteristics parameter conditions drain-source breakdown voltage v gs =0v , i d =250ua reverse transfer capacitance on characteristics 3 v gs =4.5v , i d =5.3a 33 33 45 m ohm c f=1.0mhz c v ds =20v,i d =6.2a, v gs =10v drain-source diode characteristics v gs =0v,i s =1.3a 0.79 1.2 v STM8456 www.samhop.com.tw may,29,2008 2 nc v ds =20v,i d =5.3a,v gs =4.5v 5.8 1.5 b ver 1.0 a
4 symbol min typ max units bv dss -40 v -1 i gss 100 na v gs(th) -1 v 36 g fs 12 s v sd c iss 980 pf c oss 135 pf c rss 90 pf q g 12 nc 17 nc q gs 82 nc q gd 35 t d(on) 20.7 ns t r 1.5 ns t d(off) 6.2 ns t f ns gate-drain charge v ds =-20v,v gs =0v switching characteristics gate-source charge v dd =-20v i d =-1a v gs =-10v r gen =3.3 ohm total gate charge rise time turn-off delay time v ds =-20v,i d =-5.3a,v gs =-10v fall time turn-on delay time m ohm v gs =-10v , i d =-5.3a v ds =-10v , i d =-5.3a input capacitance output capacitance dynamic characteristics r ds(on) drain-source on-state resistance forward transconductance diode forward voltage i dss ua gate threshold voltage v ds =v gs , i d =-250ua v ds =-32v , v gs =0v v gs = 20v , v ds =0v zero gate voltage drain current gate-body leakage current p-channel electrical characteristics ( t a =25 c unless otherwise noted ) off characteristics parameter conditions drain-source breakdown voltage v gs =0v , i d =-250ua reverse transfer capacitance on characteristics -3 v gs =-4.5v , i d =-4.3a 45 52 70 m ohm c f=1.0mhz c v ds =-20v,i d =-5.3a, v gs =-10v drain-source diode characteristics v gs =0v,i s =-1.3a -0.78 -1.2 v notes _ _ STM8456 www.samhop.com.tw may,29,2008 3 nc v ds =-20v,i d =-4.3a,v gs =-4.5v 11 _ -1.7 b ver 1.0 a.surface mounted on fr4 board,t < 10sec. b.pulse test:pulse width < 300us, duty cycle < 2%. c.guaranteed by design, not subject to production testing. d.starting t j =25 c,v dd = 20v,vgs=10v,l=0.5mh.
STM8456 www.samhop.com.tw may,29,2008 4 t j ( c ) i d , drain current(a) v ds , drain-to-source voltage(v) figure 1. output characteristics v gs , gate-to-source voltage(v) figure 2. transfer characteristics i d , drain current(a) r ds(on) (m ) r ds(on) , on-resistance normalized i d , drain current(a) tj, junction temperature( c ) figure 3. on-resistance vs. drain current and gate voltage figure 4. on-resistance variation with drain current and temperature vth, normalized gate-source threshold voltage bvdss, normalized drain-source breakdown voltage tj, junction temperature( c ) figure 5. gate threshold variation with temperature tj, junction temperature( c ) figure 6. breakdown voltage variation with temperature n-channel 20 12 8 4 0 0 0.8 1.6 2.4 3.2 4.0 4.8 16 t j =1 25 c -55 c 2 5 c 60 48 36 24 12 0 8 16 24 32 40 1 v g s =10v v g s =4.5v 72 1.5 1.4 1.3 1.2 1.1 1.0 0.0 0 25 50 75 100 125 v g s =10v i d =6.2a v g s =4.5v i d =5.3a 150 40 32 24 16 80 0 0.5 1 1.5 2 2.5 3 v g s =2.5v v g s =3v v g s =3.5v v g s =4v v g s =4.5v v g s =10v 1.2 1.1 1.0 0.9 0.8 0.7 0.6 0.5 -50 -25 0 25 50 75 100 125 150 v ds =v g s i d =250ua -50 -25 0 25 50 75 100 125 150 0.95 0.90 0.85 i d =250ua 1.00 1.05 1.10 1.15 ver 1.0
STM8456 www.samhop.com.tw may,29,2008 5 r ds(on) (m ) v gs , gate-to-source voltage(v) figure 7. on-resistance vs. gate-source voltage is, source-drain current(a) v sd , body diode forward voltage(v) figure 8. body diode forward voltage variation with source current c, capacitance(pf) v ds , drain-to-source voltage(v) figure 9. capacitance v gs , gate to source voltage(v) qg, total gate charge(nc) figure 10. gate charge switching time(ns) rg, gate resistance( ) figure 11. switching characteristics 56 42 0 2 4 6 8 10 0 i d =6.2a 28 14 84 70 125 c 25 c 75 c 20.0 10.0 1.0 0.2 1.6 0 5 10 15 20 25 30 1200 1000 800 600 400 200 0 c is s c os s c rs s 10 86 4 2 0 0 2 4 6 8 10 12 14 16 v ds =20v i d =6.2a 100 10 1 1 6 10 60 100 60 600 300 200 v ds =20v ,id=1a v g s =10v t d(on) t r t d(off) t f ver 1.0 i d , drain current(a) v ds , drain-source voltage(v) figure 12. maximum safe operating area 0.1 1 10 100 v g s =10v s ingle p uls e t c=25 c dc 1 ms 100 m s 0.1 0.05 1 10 r ds (o n) l im i t 100u s 1 0us 0.1 0.4 0.6 0.8 1.0 1.2 1.4 125 c 75 c 25 c
t p v ( br )d ss i a s r g i a s 0.0 1 t p d .u .t l v d s + - v d d d r ive r a 15v 20v f igure 13a. f igure 13b. u ncl am p e d s in d u ct i ve t e t ci r c u i t o f r m w ave s u ncl am p e d in d u ct i ve STM8456 ver 1.0 www.samhop.com.tw may,29,2008 6 0.01 0.1 1 10 0.00001 0.0001 0.001 0.01 0.1 1 1 0 100 1000 square wave pulse duration(sec) normalized thermal transient impedance curve normalized transient thermal resistance p dm t 1 t 2 1. r / j a (t)=r (t) * r / j a 2. r / j a =s ee datas heet 3. t j m- t a = p dm * r / j a (t) 4. duty c ycle, d=t 1 /t 2 single pulse 0.5 0.2 0.1 0.05 0.02 0.01
STM8456 www.samhop.com.tw may,29,2008 7 t j ( c ) i d , drain current(a) v ds , drain-to-source voltage(v) figure 1. output characteristics v gs , gate-to-source voltage(v) figure 2. transfer characteristics i d , drain current(a) r ds(on) (m ) r ds(on) , on-resistance normalized i d , drain current(a) tj, junction temperature( c ) figure 3. on-resistance vs. drain current and gate voltage figure 4. on-resistance variation with drain current and temperature vth, normalized gate-source threshold voltage bvdss, normalized drain-source breakdown voltage tj, junction temperature( c ) figure 5. gate threshold variation with temperature tj, junction temperature( c ) figure 6. breakdown voltage variation with temperature p-channel 1.5 1.4 1.3 1.2 1.1 1.0 0.0 0 25 50 75 150 100 125 v g s =-4.5v i d =-4.3a v g s =-10v i d =-5.3a 120 100 80 60 40 20 0 5 10 15 20 25 1 v g s =-10v v g s =-4.5v 25 20 15 10 50 0 0.5 1 1.5 2 2.5 3 v g s =-3v v g s =-4v v g s =-4.5v v g s =-8v v g s =-10v -55 c 25 c 20 12 8 4 0 0 0.8 1.6 2.4 3.2 4.0 4.8 t j=125 c 16 -50 -25 0 25 50 75 100 125 150 1.15 1.10 1.05 1.00 0.95 0.90 0.85 i d =-250ua 1.3 1.2 1.1 1.0 0.9 0.8 0.7 0.6 -50 -25 0 25 50 75 100 125 150 v ds =v g s i d =-250ua ver 1.0
STM8456 www.samhop.com.tw may,29,2008 8 r ds(on) (m ) v gs , gate-to-source voltage(v) figure 7. on-resistance vs. gate-source voltage is, source-drain current(a) v sd , body diode forward voltage(v) figure 8. body diode forward voltage variation with source current c, capacitance(pf) v ds , drain-to-source voltage(v) figure 9. capacitance v gs , gate to source voltage(v) qg, total gate charge(nc) figure 10. gate charge switching time(ns) rg, gate resistance( ) figure 11. switching characteristics 20.0 10.0 0.1 0.4 0.6 0.8 1.0 1.2 1.4 120 100 80 60 40 20 0 2 4 6 8 10 0 25 c 125 c 75 c i d =-5.3a 10 86 4 2 0 0 3 6 9 12 15 18 21 24 v ds =-20v i d =-5.3a 0 5 10 15 20 25 30 1200 1000 800 600 400 200 0 c is s c os s c rs s 100 10 1 1 6 10 60 100 60 600 300 400 t d(on) t d(off) t r t f v ds =-20v ,id=-1a v g s =-10v ver 1.0 i d , drain current(a) v ds , drain-source voltage(v) figure 12. maximum safe operating area 0.1 1 10 100 v g s =10v s ingle p uls e t c=25 c d c 1ms 100ms 0.1 0.05 1 10 r ds (o n) l im i t 10 0u s 10us 125 c 75 c 25 c 0.2 1.0
t p v ( br )d ss i a s r g i a s 0.0 1 t p d .u .t l v d s + - v d d d r ive r a 15v 20v f igure 13a. f igure 13b. u ncl am p e d s in d u ct i ve t e t ci r c u i t o f r m w ave s u ncl am p e d in d u ct i ve STM8456 ver 1.0 www.samhop.com.tw may,29,2008 9 0.01 0.1 1 10 0.00001 0.0001 0.001 0.01 0.1 1 1 0 100 1000 square wave pulse duration(sec) normalized thermal transient impedance curve single pulse p dm t 1 t 2 1. r thja (t)=r (t) * r ja 2. r ja =see datasheet 3. t jm- t a = p dm * r ja (t) 4. duty cycle, d=t 1 /t 2 th th th 0.01 0.02 0.5 0.2 0.1 0.05 normalized transient thermal resistance
STM8456 www.samhop.com.tw may,29,2008 10 package outline dimensions so-8 s y mb ols min min 0.053 0.004 0.189 0.150 0.228 0.016 0 1.35 0.10 4.80 3.81 5.79 0.41 0 max max 0.069 0.010 0.196 0.157 0.244 0.050 8 1.75 0.25 4.98 3.99 6.20 1.27 8 millime t e r s inc he s a a1 d eh l 1 e b h e l a1 a c d 0.05 typ. 0.016 typ. 0.008 typ. 0.015x45 ver 1.0
STM8456 www.samhop.com.tw may,29,2008 11 ver 1.0 so-8 tape and reel data so-8 carrier tape so-8 reel unit: @ package sop 8n 150 ? a0 b0 k0 d0 d1 e e1 e2 p0 p1 p2 t 6.50 5.25 2.10 ? 1.5 (min) ? 1.55 12.0+0.3 - 0.1 1.75 5.5 2 0.10 8.0 2 0.10 4.0 2 0.10 2.0 2 0.10 0.30 2 0.013 unit: @ tape size 12 @ reel size ? 330 m n w w1 h k s g r v 330 2 1 62 2 1.5 12.4 + 0.2 16.8 - 0.4 ? 12.75 + 0.15 2.0 2 0.15 a a e e1 e2 p0 d0 a0 b0 d1 p1 p2 feeding direction t k0 section a-a 2 0.15 2 0.10 2 0.10 2 0.10 2 0.10 terminal number 1 w 1 n w m g v r h k s

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